FIZ6138 / YARIİLETKENLERDE YAPI BOZUKLUKLARI II

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16- S. M. Sze, “Physics of Semiconductor Devices”, John Wiley and Sons Inc., 1981. 7- A. V. Ziel, “Solid State Physical Elect.”, Prentice Hall Inc. New Jersey, 7, 136- 144, 1968. 8- M. Shuer, “Physics of Semiconductor Devices”, Prentice-Hall, Int. Inc., New Jersey, 2, 194-225, 1990. 9- S. M. Sze, “VLSI Technology”, McGraw-Hill Book Co., 2, 70-82, 1988 10- A. M. Cowley and S. M. Sze, “Surface State and Barrier Height of Metal Semiconductor Systems”, J. Appl. Physics. 36, 3212-3216, 1965. 11- K. Hirose, H. Tsuda and T. Mizutani, “Al/n-GaAs Schottky Barrier Height Modifed with Rare-earth metal Into layer”, J. Appl. Phys. 64, 6575-6580, 1988. 12- H. C. Card and E. H. Rhoderick, “Studies of Tunnel MOS Diodes I. Interface Effects in Silicon Schottky Diodes”, J. Phys. D:Phys. 4, 1589-1601, 1971.